MMBTA06WT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Driver Transistor NPN Silicon

MMBTA06WT1
Driver Transistor
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model − 4 kV
ESD Rating: Machine Model − 400 V
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
TA = 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R_qJA
TJ, Tstg
Value
80
80
4.0
500
Max
150
833
−55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
GM D
GM = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBTA06WT1
MMBTA06WT1G
SC−70 3000/Tape & Reel
SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 1
Publication Order Number:
MMBTA06WT1/D