MMBTA05L Datasheet, PDF (1/6 Pages) ON Semiconductor – Driver Transistors

MMBTA05L, MMBTA06L
Driver Transistors
NPN Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBTA05L
60
MMBTA06L
80
Collector −Base Voltage
V_CBO
Vdc
MMBTA05L
60
MMBTA06L
80
Emitter −Base Voltage
V_EBO
4.0
Vdc
Collector Current − Continuous
I_C
500
mAdc
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
CDM Class IV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation FR− 5
P_D
225
Board (Note 1) T_A = 25°C
Derate above 25°C
1.8
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
Total Device Dissipation Alumina
P_D
300
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
2.4
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
Junction and Storage Temperature T_J, T_stg −55 to +150
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
1H M G
G
1GM M G
G
MMBTA05LT1
MMBTA06LT1,
SMMBTA06L
1H, 1GM = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 10
Publication Order Number:
MMBTA05LT1/D