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MMBT918LT1G_09 Datasheet, PDF (1/3 Pages) ON Semiconductor – VHF/UHF Transistor NPN Silicon | |||
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MMBT918LT1G
VHF/UHF Transistor
NPN Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector âEmitter Voltage
Collector âBase Voltage
Emitter âBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
15
30
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board,
PD
(Note 1) TA = 25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23 (TOâ236)
CASE 318
STYLE 6
MARKING DIAGRAM
M3B M G
G
1
M3B = Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBT918LT1G SOTâ23 3000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 6
Publication Order Number:
MMBT918LT1/D
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