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MMBT8099LT1_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistor NPN Silicon
MMBT8099LT1
Preferred Device
Amplifier Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
80
80
6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA
(Note 1)
556
°C/W
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA
(Note 2)
417
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 1
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
KB M G
G
1
KB
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT8099LT1
MMBT8099LT1G
SOT−23 3000/Tape & Reel
SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBT8099LT1/D