MMBT6520LT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Voltage Transistor

ON Semiconductort
High Voltage Transistor
PNP Silicon
MMBT6520LT1
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IB
IC
–350
–350
–5.0
–250
–500
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board ⁽¹⁾
TA = 25°C
Derate above 25°C
Symbol
Max
PD
225
1.8
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA = 25°C
Derate above 25°C
R_θJA
556
PD
300
2.4
Thermal Resistance, Junction to Ambient
R_θJA
417
Junction and Storage Temperature
TJ, Tstg –55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mA)
Collector–Base Breakdown Voltage (IC = –100 µA)
Emitter–Base Breakdown Voltage (IE = –10 µA)
Collector Cutoff Current (VCB = –250 V)
Emitter Cutoff Current (VEB = –4.0 V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Unit
Vdc
Vdc
Vdc
mA
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
CASE 318–08, STYLE 6
SOT–23 (TO–236AF)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
–350
—
Vdc
–350
—
Vdc
–5.0
—
Vdc
—
–50
nA
—
–50
nA
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBT6520LT1/D