MMBT6517LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – High Voltage Transistor

ON Semiconductort
High Voltage Transistor
NPN Silicon
MMBT6517LT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT6517LT1 = 1Z
Symbol
VCEO
VCBO
VEBO
IB
IC
Value
350
350
5.0
250
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Base Breakdown Voltage
(IC = 100 mAdc)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc)
Collector Cutoff Current
(VCB = 250 Vdc)
Emitter Cutoff Current
(VEB = 5.0 Vdc)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
Vdc
350
—
Vdc
350
—
Vdc
6.0
—
nAdc
—
50
nAdc
—
50
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBT6517LT1/D