MMBT6428LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Amplifier Transistors

MMBT6428LT1G,
MMBT6429LT1G
Amplifier Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol 6428LT1 6429LT1 Unit
Collector −Emitter Voltage
V_CEO
50
45
Vdc
Collector −Base Voltage
V_CBO
60
55
Vdc
Emitter−Base Voltage
V_EBO
6.0
Vdc
Collector Current − Continuous
I_C
200
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1) T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
XXX MG
G
1
XXX = Specific Device Code
MMBT6428LT1 − 1KM
MMBT6429LT1 − M1L
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
MMBT6428LT1G SOT−23
(Pb−Free)
MMBT6429LT1G SOT−23
(Pb−Free)
Shipping^†
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
MMBT6428LT1/D