MMBT6428LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Amplifier Transistors

ON Semiconductort
Amplifier Transistors
NPN Silicon
MMBT6428LT1
MMBT6429LT1
MAXIMUM RATINGS
Rating
Symbol 6428LT1 6429LT1 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
50
45
60
55
6.0
200
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
–55 to +150
°C/W
°C
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
MMBT6428
MMBT6429
MMBT6428
MMBT6429
V(BR)CEO
V(BR)CBO
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICES
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
IEBO
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
Vdc
50
—
45
—
Vdc
60
—
55
—
µAdc
—
0.1
µAdc
—
0.01
µAdc
—
0.01
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBT6428LT1/D