MMBT6427LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Darlington Transistor

ON Semiconductort
Darlington Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board⁽¹⁾
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,⁽²⁾ T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT6427LT1 = 1V
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
40
40
12
500
Symbol
P_D
R_qJA
P_D
R_qJA
T_J, T_stg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mAdc, V_BE = 0)
Collector–Base Breakdown Voltage
(I_C = 100 mAdc, I_E = 0)
Emitter–Base Breakdown Voltage
(I_C = 10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CE = 25 Vdc, I_B = 0)
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = 10 Vdc, I_C = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MMBT6427LT1
ON Semiconductor Preferred Device
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR 3
BASE
1
EMITTER 2
Symbol
Min
Max
Unit
V_(BR)CEO
40
V_(BR)CBO
40
V_(BR)EBO
12
I_CES
—
I_CBO
—
I_EBO
—
Vdc
—
Vdc
—
Vdc
—
µAdc
1.0
nAdc
50
nAdc
50
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMBT6427LT1/D