MMBT589LT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Switching Transistor

ON Semiconductort
High Current Surface Mount
PNP Silicon Switching Transistor
for Load Management
in Portable Applications
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Collector Current – Peak
DEVICE MARKING
MMBT589LT1 = G3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage Temperature
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 8
Symbol
Max
VCEO
–30
VCBO
–50
VEBO
–5.0
IC
–1.0
ICM
–2.0
Symbol
PD ⁽¹⁾
R_qJA ⁽¹⁾
PD ⁽²⁾
R_qJA ⁽²⁾
PDsingle ⁽³⁾
TJ, Tstg
Max
310
2.5
403
710
5.7
176
575
–55 to +150
Unit
Vdc
Vdc
Vdc
Adc
A
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
°C
MMBT589LT1
30 VOLTS
2.0 AMPS
PNP TRANSISTOR
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
© Semiconductor Components Industries, LLC, 2001
1
August, 2001 – Rev. 1
Publication Order Number:
MMBT589LT1/D