MMBT5401WT1G Datasheet, PDF (1/6 Pages) ON Semiconductor – High Voltage Transistor PNP Silicon

MMBT5401WT1G
High Voltage Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
−150
Vdc
Collector −Base Voltage
V_CBO
−160
Vdc
Emitter −Base Voltage
V_EBO
−5.0
Vdc
Collector Current − Continuous
I_C
−500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 2)
T_A = 25°C
Derate Above 25°C
P_D
400
mW
3.2
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
312
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
1. FR−5 @ 100 mm², 0.5 oz. copper traces, still air.
2. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
4W MG
G
1
4W = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT5401WT1G SC−70 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
August, 2012 − Rev. 1
Publication Order Number:
MMBT5401W/D