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MMBT5401LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – High Voltage Transistor
MMBT5401LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−23 (TO−236)
CASE 318
STYLE 6
2L M
2L = Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBT5401LT1 SOT−23 3000 Tape & Reel
MMBT5401LT1G
MMBT5401LT3
MMBT5401LT3G
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
January, 2005 − Rev. 4
Publication Order Number:
MMBT5401LT1/D