MMBT5088LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Low Noise Transistors NPN Silicon

MMBT5088LT1G,
MMBT5089LT1G
Low Noise Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBT5088
30
MMBT5089
25
Collector −Base Voltage
V_CBO
Vdc
MMBT5088
35
MMBT5089
30
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_EBO
I_C
4.5
Vdc
50
mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
Max
Unit
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
1x M G
G
1
1x = Device Code
x = Q for MMBT5088LT1
x = R for MMBT5089LT1
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT5088LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBT5089LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 3
Publication Order Number:
MMBT5088LT1/D