MMBT5088LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Low Noise Transistors

ON Semiconductort
Low Noise Transistors
NPN Silicon
MMBT5088LT1
MMBT5089LT1
MMBT5089LT1 is a Preferred Device
MAXIMUM RATINGS
Rating
Symbol 5088LT1 5089LT1 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30
25
35
30
4.5
50
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
TJ, Tstg
417
–55 to +150
°C/W
°C
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT5088
MMBT5089
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5088
MMBT5089
V(BR)CBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
MMBT5088
MMBT5089
ICBO
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MMBT5088
MMBT5089
IEBO
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AF)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
Vdc
30
—
25
—
Vdc
35
—
30
—
nAdc
—
50
—
50
nAdc
—
50
—
100
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMBT5088LT1/D