MMBT489LT1G_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Current Surface Mount NPN Silicon Switching Transistor

MMBT489LT1G
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
V_CEO
30
V_CBO
50
V_EBO
5.0
I_C
1.0
I_CM
2.0
Symbol
Max
Vdc
Vdc
Vdc
A
A
Unit
Total Device Dissipation (Note 1)
@T_A = 25°C
Derate above 25°C
P_D
310
mW
2.5
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R_qJA
403
°C/W
Total Device Dissipation (Note 2)
@T_A = 25°C
Derate above 25°C
P_D
710
mW
5.7
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R_qJA
176
°C/W
Total Device Dissipation (Single Pulse < 10 s) P_Dsingle
575
mW
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
www.onsemi.com
30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
N3 M G
G
1
N3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT489LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
1
October, 2016 − Rev. 6
Publication Order Number:
MMBT489LT1/D