MMBT489LT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications

MMBT489LT1
High Current Surface
Mount NPN Silicon
Switching Transistor for
Load Management in
Portable Applications
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
I_CM
Characteristic
Symbol
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 1)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
Thermal Resistance,
Junction to Ambient
R_θJA (Note 2)
Total Device Dissipation
(Single Pulse < 10 sec.)
P_Dsingle
Junction and Storage
Temperature Range
T_J, T_stg
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
Max
30
50
5.0
1.0
2.0
Max
310
2.5
403
710
5.7
176
575
−55 to
+150
Unit
Vdc
Vdc
Vdc
A
A
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
°C
http://onsemi.com
30 VOLTS
2.0 AMPS
NPN TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318−08
STYLE 6
DEVICE MARKING
3
N3
1
2
N3 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT489LT1
SOT−23 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
July, 2003 − Rev. 3
Publication Order Number:
MMBT489LT1/D