MMBT4401WT1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Switching Transistor NPN Silicon

MMBT4401WT1
Preferred Device
Switching Transistor
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
T_A = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
Max
Unit
P_D
150
mW
R_qJA
833
°C/W
T_J, T_stg −55 to +150 °C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
2X D
2X = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT4401WT1
SC−70 3000/Tape & Reel
MMBT4401WT1G SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
February, 2004 − Rev. 1
Publication Order Number:
MMBT4401WT1/D