MMBT4126LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Transistor

MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: − Human Body Model: > 4000 V
− Machine Model: > 400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current−Continuous
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
−25
−25
−4
−200
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) @T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R_qJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R_qJA
417
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
C3 M G
G
C3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT4126LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 2
Publication Order Number:
MMBT4126LT1/D