MMBT4126LT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – General Purpose Transistor PNP Silicon

MMBT4126LT1
Preferred Device
General Purpose Transistor
PNP Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current–Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
Characteristic
Symbol
Total Device Dissipation FR–5 Board
P_D
(Note 1.)
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
R_qJA
Total Device Dissipation
P_D
Alumina Substrate, (Note 2.)
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
R_qJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Value
–25
–25
–4
–200
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23
CASE 318
STYLE 6
MARKING DIAGRAM
C3 M
C3 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT4126LT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 0
Publication Order Number:
MMBT4126LT1/D