MMBT4124LT1G_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor

MMBT4124LT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
25
Vdc
30
Vdc
5.0
Vdc
200
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 1) @T_A = 25°C
Derate above 25°C
P_D
225
W
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
W
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
ZC M G
G
ZC = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT4124LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
1
October, 2016 − Rev. 3
Publication Order Number:
MMBT4124LT1/D