MMBT3906LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Transistor

MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−40
−40
−5.0
−200
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8 mW/°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556 °C/W
300
mW
2.4 mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
1
2A
2
SOT−23 (TO−236)
CASE 318
Style 6
2A
= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBT3906LT1 SOT−23 3000 / Tape & Reel
MMBT3906LT1G SOT−23 3000 / Tape & Reel
MMBT3906LT3 SOT−23 10000 / Tape & Reel
MMBT3906LT3G SOT−23 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
February, 2004 − Rev. 4
Publication Order Number:
MMBT3906LT1/D