MMBT3904WT1 Datasheet, PDF (1/12 Pages) Motorola, Inc – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MMBT3904WT1/D
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
MMBT3904WT1
MMBT3906WT1
Collector – Base Voltage
MMBT3904WT1
MMBT3906WT1
Emitter – Base Voltage
MMBT3904WT1
MMBT3906WT1
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R_qJA
TJ, Tstg
Value
40
–40
60
–40
6.0
–5.0
200
–200
Max
150
833
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
40
Vdc
—
–40
—
V(BR)CBO
60
Vdc
—
–40
—
V(BR)EBO
Vdc
6.0
—
–5.0
—
IBL
nAdc
—
50
—
–50
ICEX
—
nAdc
50
—
–50
v v ^{1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.}
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1