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MMBT3416LT3G_16 Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Amplifier | |||
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MMBT3416LT3G
General Purpose Amplifier
NPN Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
Collector âBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VEBO
IC
40
Vdc
4.0
Vdc
100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23 (TOâ236)
CASE 318
STYLE 6
MARKING DIAGRAM
GP M G
G
1
GP = Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBT3416LT3G SOTâ23 10,000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1998
1
October, 2016 â Rev. 3
Publication Order Number:
MMBT3416LT3/D
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