MMBT2907AWT1G_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Transistor

MMBT2907AWT1G,
NSVMMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−60
−60
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) T_A = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
P_D
R_qJA
T_J, T_stg
150
833
−55 to
+150
mW
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC −70/SOT− 323
CASE 419 −04
STYLE 3
MARKING DIAGRAM
20 MG
G
1
20
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package Shipping^†
MMBT2907AWT1G
SC−70 3000 Tape &
(Pb−Free)
Reel
NSVMMBT2907AWT1G SC−70 3000 Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 8
Publication Order Number:
MMBT2907AWT1/D