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MMBT2907AWT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – General Purpose Transistor | |||
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MMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SCâ70/SOTâ323 package which
is designed for low power surface mount applications.
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
Collector âBase Voltage
Emitter âBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
â60
â60
â5.0
â600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FRâ 5 Board
(Note 1) TA = 25°C
Thermal Resistance JunctionâtoâAmbient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
150
833
â55 to
+150
mW
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC â70/SOTâ323
CASE 419 â04
STYLE 3
MARKING DIAGRAM
20 MG
G
1
20
= Specific Device Code
M
= Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBT2907AWT1G SCâ70 3000 Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
February, 2011 â Rev. 5
Publication Order Number:
MMBT2907AWT1/D
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