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MMBT2907ALT1G Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistors | |||
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MMBT2907ALT1G
General Purpose Transistors
PNP Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
Collector âBase Voltage
Emitter âBase Voltage
Collector Current â Continuous
Collector Current â Peak (Note 3)
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
â60
â60
â5.0
â600
â1200
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FRâ 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23 (TOâ236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
2F M G
G
1
2F = Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBT2907ALT1G SOTâ23 3000 Tape & Reel
(PbâFree)
MMBT2907ALT3G SOTâ23 10,000 Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
January, 2011 â Rev. 11
Publication Order Number:
MMBT2907ALT1/D
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