MMBT2131T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistors
MMBT2131T1
MMBT2131T3
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient ⁽¹⁾
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient ⁽²⁾
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
R_qJA
PD
PD
R_qJA
TJ, Tstg
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
PNP
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
Vdc
40
—
—
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
Vdc
30
—
—
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
V(BR)EBO
Vdc
5.0
—
—
ICBO
mAdc
—
—
1.0
—
—
10
IEBO
mAdc
—
—
10
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150
—
Vdc
—
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
Vdc
—
0.25
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
—
Vdc
—
0.4
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
—
Vdc
—
1.1
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
Vdc
—
1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
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