MMBFJ309LT1_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – JFET - VHF/UHF Amplifier Transistor N-Channel

MMBFJ309LT1,
MMBFJ310LT1
JFET − VHF/UHF Amplifier
Transistor
N−Channel
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
Gate−Source Voltage
Gate Current
V_DS
25
Vdc
V_GS
25
Vdc
I_G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
6x = Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBFJ309LT1 SOT−23 3,000 / Tape & Reel
MMBFJ309LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBFJ310LT1 SOT−23 3,000 / Tape & Reel
MMBFJ310LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
MMBFJ309LT1/D