MMBFJ309L Datasheet, PDF (1/5 Pages) ON Semiconductor – JFET - VHF/UHF Amplifier Transistor

MMBFJ309L, MMBFJ310L,
SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
V_DS
25
Vdc
Gate−Source Voltage
V_GS
25
Vdc
Gate Current
I_G
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2011
1
November, 2011 − Rev. 5
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = U for MMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBFJ309LT1G SOT−23 3,000 / Tape &
(Pb−Free)
Reel
MMBFJ310LT1G SOT−23 3,000 / Tape &
(Pb−Free)
Reel
SMMBFJ310LT1G SOT−23 3,000 / Tape &
(Pb−Free)
Reel
SMMBFJ310LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBFJ309LT1/D