MMBF5484LT1_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – JFET Transistor N−Channel

MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Drain−Gate Voltage
V_DG
Reverse Gate−Source Voltage
V_GS(r)
Forward Gate Current
I_G(f)
Continuous Device Dissipation at or Below P_D
T_C = 25°C
Linear Derating Factor
Value
25
25
10
200
2.8
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Storage Channel Temperature Range
THERMAL CHARACTERISTICS
T_stg −65 to +150 °C
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
M6B M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
M6B = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBF5484LT1 SOT−23 3,000 / Tape & Reel
MMBF5484LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMBF5484LT1/D