MMBF4416LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – JFET VHF/UHF Amplifier Transistor

ON Semiconductort
JFET
VHF/UHF Amplifier Transistor
N–Channel
MMBF4416LT1
ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF4416LT1 = M6A
Symbol
VDS
VDG
VGS
IG
Value
30
30
30
10
Symbol
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
3
GATE
2 SOURCE
1 DRAIN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 150°C)
Gate Source Cutoff Voltage
(ID = 1.0 nAdc, VDS = 15 Vdc)
Gate Source Voltage
(ID = 0.5 mAdc, VDS = 15 Vdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VGS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG = 1.0 mAdc, VDS = 0)
1. FR–5 = 1.0  0.75  0.062 in.
Symbol
Min
V(BR)GSS
30
IGSS
—
—
VGS(off)
—
VGS
–1.0
IDSS
5.0
VGS(f)
—
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Max
Unit
—
Vdc
nAdc
1.0
200
–6.0
Vdc
–5.5
Vdc
15
mAdc
1.0
Vdc
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBF4416LT1/D