MMBD7000LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Dual Switching Diode

ON Semiconductort
Dual Switching Diode
MMBD7000LT1
ON Semiconductor Preferred Device
3
1
2
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD7000LT1 = M5C
Symbol
VR
IF
IFM(surge)
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Value
100
200
500
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
ANODE
3
CATHODE/ANODE
2
CATHODE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
V(BR)
100
IR
—
IR2
—
IR3
—
VF
0.55
0.67
0.75
trr
—
Capacitance (VR = 0 V)
C
—
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Max
Unit
—
Vdc
µAdc
1.0
3.0
100
Vdc
0.7
0.82
1.1
4.0
ns
1.5
pF
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBD7000LT1/D