MMBD6050LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Switching Diode

ON Semiconductort
Switching Diode
MMBD6050LT1
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD6050LT1 = 5A
Symbol
VR
IF
IFM(surge)
Value
70
200
500
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
Capacitance (VR = 0 V)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
3
CATHODE
1
ANODE
Symbol
Min
Max
Unit
V(BR)
70
IR
—
—
Vdc
0.1
µAdc
VF
Vdc
0.55
0.7
0.85
1.1
trr
—
4.0
ns
C
—
2.5
pF
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order Number:
MMBD6050LT1/D