MMBD301M3T5G Datasheet, PDF (1/3 Pages) ON Semiconductor – Silicon Hot-Carrier Diode

MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed primarily for
high−efficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT−723 surface mount package. This device is
ideal for low−power surface mount applications where board space is
at a premium.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ V_R = 15 V
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
30
V
P_F
200
mW
2.0
mW/°C
Operating Junction Temperature Range
T_J
−55 to +125 °C
Storage Temperature Range
T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE
1
ANODE
3
2
1
AK
M
MARKING
DIAGRAM
SOT−723
CASE 631AA
STYLE 2
AK M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBD301M3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I_R = 10 mA)
Total Capacitance (V_R = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (V_R = 25 V) Figure 3
Forward Voltage (I_F = 1.0 mAdc) Figure 4
Forward Voltage (I_F = 10 mAdc) Figure 4
Symbol
Min
Typ
Max Unit
V_(BR)R
30
−
−
V
C_T
−
0.9
1.5
pF
I_R
−
13
200 nAdc
V_F
−
0.38
0.45
Vdc
V_F
−
0.52
0.6
Vdc
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 − Rev. 0
Publication Order Number:
MMBD301M3/D