MLD2N06CL Datasheet, PDF (1/7 Pages) Motorola, Inc – VOLTAGE CLAMPED CURRENT LIMITING MOSFET

MLD2N06CL
Preferred Device
SMARTDISCRETESt MOSFET
2 Amp, 62 Volts, Logic Level
N−Channel DPAK
The MLD2N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and SENSEFETt technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_C = 25°C
Total Power Dissipation @ T_C = 25°C
Electrostatic Voltage
V_DSS
V_DGR
V_GS
I_D
P_D
ESD
Clamped Vdc
Clamped Vdc
±10
Vdc
Self−limited Adc
40
W
2.0
kV
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
T_J, T_stg −50 to 150 °C
Maximum Junction Temperature
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 5 seconds
T_J(max)
R_qJC
R_qJA
R_qJA
T_L
150
°C
°C/W
3.12
100
71.4
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V_(BR)DSS
62 V (Clamped)
R_DS(on) TYP
400 mW
I_D MAX
2.0 A
N−Channel ^D
R1
G
R2
S
12
3
4
CASE 369C
DPAK
STYLE 2
MARKING
DIAGRAM
YWW
L2N
06CLG
Y
WW
L2N06CL
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
MLD2N06CL
MLD2N06CLG
MLD2N06CLT4
DPAK
75 Units/Rail
DPAK
(Pb−Free)
75 Units/Rail
DPAK 2500 Tape & Reel
MLD2N06CLT4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
Publication Order Number:
MLD2N06CL/D