MLD1N06CL Datasheet, PDF (1/7 Pages) Motorola, Inc – VOLTAGE CLAMPED CURRENT LIMITING MOSFET

MLD1N06CL
Preferred Device
SMARTDISCRETESt MOSFET
1 Amp, 62 Volts, Logic Level
N−Channel DPAK
The MLD1N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and Sensefet technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS Clamped Vdc
Drain−to−Gate Voltage (R_GS = 1.0 MW)
V_DGR Clamped Vdc
Gate−to−Source Voltage
− Continuous
V_GS
±10
Vdc
Drain Current − Continuous
− Single Pulse
I_D Self−limited Adc
I_DM
1.8
Apk
Total Power Dissipation
P_D
40
W
Operating and Storage Temperature Range T_J, T_stg −50 to 150 °C
Electrostatic Discharge Voltage
(Human Model)
ESD
2.0
kV
THERMAL CHARACTERISTICS
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R_qJC
R_qJA
R_qJA
°C/W
3.12
100
71.4
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 5 seconds
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V_(BR)DSS
62 V (Clamped)
R_DS(on) TYP
750 mW
I_D MAX
1.0 A
N−Channel _D
R1
G
R2
12
3
4
CASE 369C
DPAK
STYLE 2
S
MARKING
DIAGRAM
YWW
L1N
06CG
Y
WW
L1N06C
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
MLD1N06CLT4
DPAK 2500 Tape & Reel
MLD1N06CLT4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 3
Publication Order Number:
MLD1N06CL/D