MJF3055_08 Datasheet, PDF (1/5 Pages) ON Semiconductor – Complementary Silicon Power Transistors

MJF3055 (NPN),
MJF2955 (PNP)
Complementary
Silicon Power Transistors
Specifically designed for general purpose amplifier and switching
applications.
Features
• Isolated Overmold Package (1500 Volts RMS Min)
• Electrically Similar to the Popular MJE3055T and MJE2955T
• Collector−Emitter Sustaining Voltage − V_CEO(sus) 90 Volts
• 10 Amperes Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• UL Recognized, File #E69369, to 3500 V_RMS Isolation
• Epoxy Meets UL 94 V−0 at 0.125 in
• ESD Ratings: Machine Model, C; u400 V
Human Body Model, 3B; u8000 V
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RMS Isolation Voltage (Note 3)}
(t = 0.3 sec, R.H. ≤ 30%, T_A = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Per Figure 5}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C (Note 2)}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TA = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature Range
V_CEO(sus)
V_CES
V_EBO
I_C
I_B
V_ISOL
P_D
P_D
T_J, T_stg
90
90
5.0
10
6.0
4500
30
0.25
2.0
0.016
–55 to
+150
Vdc
Vdc
Vdc
Adc
Adc
V_RMS
W
W/_C
W
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case (Note 2) RqJC}
4.0 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
R_qJA
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Lead Temperature for Soldering Purposes}
T_L
260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Maximum ratings are those values beyond which device damage can occur.}
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
3. Proper strike and creepage distance must be provided.
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS, 30 WATTS
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
MARKING DIAGRAM
Fxx55G
AYWW
Fxx55 = Specific Device Code
xx= 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
MJF2955
MJF2955G
MJF3055
MJF3055G
Package
Shipping
TO−220 FULLPACK 50 Units/Rail
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
TO−220 FULLPACK 50 Units/Rail
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 7
Publication Order Number:
MJF3055/D