MJF15030_08 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Power Transistors

MJF15030 (NPN),
MJF15031 (PNP)
Complementary Power
Transistors
For Isolated Package Applications
Designed for general−purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
Features
• Electrically Similar to the Popular MJE15030 and MJE15031
• 150 V_CEO(sus)
• 8 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High Current Gain−Bandwidth Product −
f_T = 30 MHz (Min) @ I_C
= 500 mAdc
• UL Recognized, File #E69369, to 3500 V_RMS Isolation
• Pb−Free Packages are Available*
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RMS Isolation Voltage (Note 1)}
(t = 0.3 sec, R.H. ≤ 30%, T_A = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Per Figure 11}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation (Note 2) @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Total Power Dissipation @ T}A ^{= 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction−to−Case (Note 2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Lead Temperature for Soldering Purposes}
Symbol
V_CEO
V_CB
V_EB
V_ISOL
I_C
I_B
P_D
P_D
T_J, T_stg
Symbol
R_qJA
R_qJC
T_L
Value
150
150
5
4500
Unit
Vdc
Vdc
Vdc
V_RMS
8
Adc
16
2
Adc
36
0.016
W
W/_C
2.0
0.016
W
W/_C
–65 to +150 _C
Max
Unit
62.5
_C/W
3.5
_C/W
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS, 36 WATTS
MARKING
DIAGRAM
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
MJF1503xG
AYWW
MJF1503x = Specific Device Code
x = 0 or 1
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJF15030 TO−220 FULLPACK 50 Units/Rail
MJF15030G TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
MJF15031 TO−220 FULLPACK 50 Units/Rail
MJF15031G TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 6
Publication Order Number:
MJF15030/D