MJE5740 Datasheet, PDF (1/6 Pages) Motorola, Inc – POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5740/D
NPN Silicon Power
Darlington Transistors
MJE5740
MJE5741*
MJE5742*
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power
*Motorola Preferred Device
switching in inductive circuits. They are particularly suited for operation in applications
such as:
POWER DARLINGTON
TRANSISTORS
• Small Engine Ignition
8 AMPERES
• Switching Regulators
• Inverters
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{• Solenoid and Relay Drivers}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{• Motor Controls}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
Emitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak(1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)
Total Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TA = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
PD
MJE5740
300
600
MJE5741
350
700
8
8
16
2.5
5
2
16
MJE5742
400
800
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
PD
@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
80
640
–ā65 to +ā150
Watts
mW/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purposes: 1/8″ from Case for 5 Seconds
Symbol
R_θJC
R_θJA
TL
Max
Unit
1.56
_C/W
62.5
_C/W
275
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS (2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 50 mA, IB = 0)}
MJE5740 VCEO(sus)
300
MJE5741
350
MJE5742
400
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{SECOND BREAKDOWN}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Second Breakdown Collector Current with Base Forward Biased}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Clamped Inductive SOA with Base Reverse Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.}
ICEV
—
—
IEBO
—
IS/b
RBSOA
300, 350, 400 VOLTS
80 WATTS
≈ 100 ≈ 50
CASE 221A–06
TO–220AB
Typ
Max
Unit
—
—
Vdc
—
—
—
—
—
1
mAdc
—
5
—
75
mAdc
See Figure 6
See Figure 7
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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