MJE350 Datasheet, PDF (1/3 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

MJE350
Plastic Medium Power
PNP Silicon Transistor
This device is designed for use in line−operated applications such as
low power, line−operated series pass and switching regulators
requiring PNP capability.
Features
• High Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 300 Vdc @ I_C
= 1.0 mAdc
• Excellent DC Current Gain −
h_FE = 30 −240 @ I_C
= 50 mAdc
• Plastic Thermopad Package
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Temperature Range}
Symbol
V_CEO
V_EB
I_C
P_D
T_J, T_stg
Value
Unit
300
Vdc
3.0
Vdc
500
mAdc
20
W
0.16
mW/_C
–65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case qJC}
6.25
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Sustaining Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I_C = 1.0 mAdc, I_B = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(V_CB = 300 Vdc, I_E = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VEB = 3.0 Vdc, IC = 0)}
V_CEO(sus) 300 −
Vdc
I_CBO
− 100 mAdc
I_EBO
− 100 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 50 mAdc, VCE = 10 Vdc)}
h_FE
30 240
−
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 20 WATTS
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
JE350G
Y
WW
JE350
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE350
MJE350G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
© Semiconductor Components Industries, LLC, 2007
1
January, 2007 − Rev. 14
Publication Order Number:
MJE350/D