MJE341 Datasheet, PDF (1/4 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJE341/D
Plastic NPN Silicon
Medium-Power Transistors
. . . useful for medium voltage applications requiring high fT such as converters and
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ extended range amplifiers.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
MJE341 MJE344
150
200
175
200
3.0
5.0
500
250
20
0.16
– 65 to + 150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Watts
W/_C
_C
Symbol
θ_JC
Max
Unit
6.25
_C/W
1.0
0.5
0.2 TJ = 150°C
500 µs
1.0 ms ^ALL
ALL
0.1
dc
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
0.02
THERMAL LIMIT TC = 25°C
0.01
10
20 30 40 60
100
200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
MJE341
MJE344
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150 – 200 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C; TC is vari-
v ^{able depending on conditions. Second breakdown pulse lim-}
its are valid for duty cycles to 10% provided TJ(pk) 150_C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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