MJE243_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

MJE243 − NPN,
MJE253 − PNP
Preferred Device
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
• High Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ I_C = 200 mAdc
h_FE = 40 −200
= 40−120
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 0.3 Vdc (Max) @ I_C = 500 mAdc
• High Current Gain Bandwidth Product −
f_T = 40 MHz (Min) @ I_C = 100 mAdc
• Annular Construction for Low Leakages
I_CBO = 100 nAdc (Max) @ Rated V_CB
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ T_C = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
P_D
T_J, T_stg
Value
Unit
100
Vdc
100
Vdc
7.0
Vdc
4.0
Adc
8.0
10
Adc
15
W
0.12
mW/_C
1.5
0.012
W
mW/_C
–65 to +150 _C
Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
q_JC
8.34
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Junction−to−Ambient}
q_JA
83.4
Unit
_C/W
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 11
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
JE2x3G
Y
= Year
WW = Work Week
JE2x3 = Device Code
x = 4 or 5
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE243
MJE243G
MJE253
Package
TO−225
TO−225
(Pb−Free)
TO−225
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
MJE253G
TO−225
(Pb−Free)
500 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE243/D