MJE15034 Datasheet, PDF (1/6 Pages) ON Semiconductor – 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS

MJE15034 NPN,
MJE15035 PNP
Preferred Device
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
. . . designed for use as high−frequency drivers in audio amplifiers.
• h_FE = 100 (Min) @ I_C = 0.5 Adc
= 10 (Min) @ I_C = 2.0 Adc
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035
• High Current Gain − Bandwidth Product
f_T = 30 MHz (Min) @ I_C = 500 mAdc
• TO−220AB Compact Package
• Epoxy meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model: C
Human Body Model: 3B
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Power Dissipation @ T_C = 25_C
Derate above 25_C
Total Power Dissipation @ T_A = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
P_D
T_J, T_stg
Symbol
R_θJC
R_θJA
MJE15034
MJE15035 Unit
350
Vdc
350
Vdc
5.0
Vdc
4.0
Adc
8.0
1.0
Adc
50
Watts
0.40
W/_C
2.0
0.016
Watts
W/_C
– 65 to
_C
+ 150
Max
Unit
2.5
_C/W
62.5
_C/W
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
350 VOLTS
50 WATTS
MARKING DIAGRAM
& PIN ASSIGNMENT
4
1
2
3
TO−220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MJE1503x
LLYWW
MJE1503x
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJE15034
TO−220AB
50 Units/Rail
MJE15035
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 2
Publication Order Number:
MJE15034/D