MJE13007G Datasheet, PDF (1/10 Pages) ON Semiconductor – NPN Bipolar Power Transistor For Switching Power Supply Applications

MJE13007G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
• V_CEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ T_C = 100°C
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Standard TO−220
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Symbol
V_CEO
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
Value
400
700
9.0
8.0
16
4.0
8.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
I_E
12
Adc
I_EM
24
P_D
80
W
0.64
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
T_J, T_stg −65 to 150 _C
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R_qJC
R_qJA
T_L
Max
1.56
62.5
260
Unit
_C/W
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 6
http://onsemi.com
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS − 80 WATTS
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
MJE13007G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13007G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MJE13007/D