MJE13005_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS

MJE13005
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• V_CEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ T_C = 100_C
• Inductive Switching Matrix 2 to 4 A, 25 and 100_C t_c @ 3A,
100_C is 180 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
Symbol
V_CEO(sus)
V_CEV
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
Value
400
700
9
4
8
2
4
6
12
2
16
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
P_D
75
W
600
W/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−65 to
_C
+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
62.5 _C/W
Thermal Resistance, Junction−to−Case
R_qJC
1.67 _C/W
Maximum Lead Temperature for Soldering
T_L
Purposes 1/8″ from Case for 5 Seconds
275
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 7
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
123
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
MJE13005G
AY WW
A
= Assembly
Location
Y
= Year
WW
= Work Week
G
= Pb−Free Pack-
age
ORDERING INFORMATION
Device
Package
Shipping
MJE13005
TO−220
50 Units / Rail
MJE13005G
TO−220
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE13005/D