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MJE13005G Datasheet, PDF (1/7 Pages) ON Semiconductor – SWITCHMODE Series NPN Silicon Power Transistors | |||
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MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for highâvoltage, highâspeed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulatorâs, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
⢠VCEO(sus) 400 V
⢠Reverse Bias SOA with Inductive Loads @ TC = 100_C
⢠Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A,
100_C is 180 ns (Typ)
⢠700 V Blocking Capability
⢠SOA and Switching Applications Information
⢠These Devices are PbâFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value Unit
CollectorâEmitter Voltage
CollectorâEmitter Voltage
EmitterâBase Voltage
Collector Current â Continuous
â Peak (Note 1)
Base Current
â Continuous
â Peak (Note 1)
Emitter Current
â Continuous
â Peak (Note 1)
Total Device Dissipation @ TA = 25_C
Derate above 25°C
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
400
700
9
4
8
2
4
6
12
2
0.016
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
75
W
0.6
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â65 to
_C
+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctionâtoâAmbient RqJA
62.5 _C/W
Thermal Resistance, JunctionâtoâCase
RqJC
1.67 _C/W
Maximum Lead Temperature for Soldering
TL
Purposes 1/8â³ from Case for 5 Seconds
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ⤠10%.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
August, 2010 â Rev. 9
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS â 75 WATTS
TOâ220AB
CASE 221Aâ09
STYLE 1
123
MARKING DIAGRAM
MJE13005G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbâFree Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13005G
TOâ220
(PbâFree)
50 Units / Rail
Publication Order Number:
MJE13005/D
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