MJE13005 Datasheet, PDF (1/7 Pages) Motorola, Inc – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• V_CEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ T_C = 100_C
• Inductive Switching Matrix 2 to 4 A, 25 and 100_C t_c @ 3A,
100_C is 180 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T_A = 25_C
Derate above 25°C
V_CEO(sus)
V_CEV
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
400
700
9
4
8
2
4
6
12
2
0.016
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
P_D
75
W
0.6
W/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−65 to
_C
+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
62.5 _C/W
Thermal Resistance, Junction−to−Case
R_qJC
1.67 _C/W
Maximum Lead Temperature for Soldering
T_L
Purposes 1/8″ from Case for 5 Seconds
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
August, 2010 − Rev. 9
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
MJE13005G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13005G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MJE13005/D