MJE13003 Datasheet, PDF (1/8 Pages) Wing Shing Computer Components – NPN SILICON TRANSISTOR

MJE13003
SWITCHMODEt Series NPN
Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• Reverse Biased SOA with Inductive Loads @ T_C = 100_C
• Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C
t_c @ 1 A, 100_C is 290 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak (Note 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
− Continuous
− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Emitter Current}
− Continuous
− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{THERMAL CHARACTERISTICS}
Symbol
V_CEO(sus)
V_CEV
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
P_D
T_J, T_stg
Value
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
–65 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
mW/_C
W
mW/_C
_C
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Load Temperature for Soldering}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Purposes: 1/8″ from Case for 5 Seconds}
R_qJC
R_qJA
T_L
3.12
_C/W
89
_C/W
275
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings are those values beyond which device damage can occur.}
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
http://onsemi.com
1.5 AMPERES
NPN SILICON POWER
TRANSISTORS
300 AND 400 VOLTS
40 WATTS
321
TO−225
CASE 77
STYLE 3
MARKING DIAGRAM
1 BASE
2 COLLECTOR
3 EMITTER
YWW
JE
13003G
Y
WW
JE13003
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13003
MJE13003G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
Publication Order Number:
MJE13003/D