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MJE13002 Datasheet, PDF (1/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,300-400V,40W) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13002/D
MJE13002*
⢠Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
MJE13003*
*Motorola Preferred Device
1.5 AMPERE
NPN SILICON
POWER TRANSISTORS
These devices are designed for highâvoltage, highâspeed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
300 AND 400 VOLTS
40 WATTS
220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
⢠Reverse Biased SOA with Inductive Loads @ TC = 100_C
⢠Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C
. . . tc @ 1 A, 100_C is 290 ns (Typ).
⢠700 V Blocking Capability
⢠SOA and Switching Applications Information.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Base Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Peak(1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current â Continuous
â Peak (1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Peak(1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TA = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction Temperature Range
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Ambient
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Maximum Load Temperature for Soldering Purposes:
1/8â³ from Case for 5 Seconds
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ v (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
Symbol
RθJC
RθJA
TL
CASE 77â08
TOâ225AA TYPE
MJE13002
MJE13003
300
400
600
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
â 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
mW/_C
Watts
mW/_C
_C
Max
Unit
3.12
_C/W
89
_C/W
275
_C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designerâs and SWITCHMODE are trademarks of Motorola, Inc.
REV 4
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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