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MJE122 Datasheet, PDF (1/8 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER DARLINGTONS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for generalâpurpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
⢠Electrically Similar to the Popular TIP122 and TIP127
⢠100 VCEO(sus)
⢠5 A Rated Collector Current
⢠No Isolating Washers Required
⢠Reduced System Cost
⢠High DC Current Gain â 2000 (Min) @ IC = 3 Adc
⢠UL Recognized, File #E69369, to 3500 VRMS Isolation
Order this document
by MF122/D
MJNFP1N22
MJPFN1P27
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CASE 221Dâ02
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TOâ220 TYPE
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
Symbol
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ RMS Isolation Voltage (1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (for 1 sec, R.H. < 30%,
TA = 25_C)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Peak
Test No. 1 Per Fig. 14
Test No. 2 Per Fig. 15
Test No. 3 Per Fig. 16
VCEO
VCB
VEB
VISOL
IC
100
100
5
4500
3500
1500
5
8
Vdc
Vdc
Vdc
VRMS
Adc
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation* @ TC = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
IB
0.12
Adc
PD
30
Watts
0.24
W/_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2
Watts
0.016
W/_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction Temperature Range
TJ, Tstg
â 65 to + 150
IC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case*
RθJC
4.1
_C/W
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Lead Temperature for Soldering Purpose
TL
260
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ * Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of ⥠6 in. lbs.
(1) Proper strike and creepage distance must be provided.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
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